Idda, A., Ayat, L. and Zaoui, O. 2019. EFFECT OF WIDE-BANDGAP OF N-TYPE AMORPHOUS SILICON OXIDE (a-SiOX:H) LAYER ON THE PERFORMANCE OF a-Si:H SOLAR CELL. Journal of Fundamental and Applied Sciences. 12, 1S (Nov. 2019), 66–77. DOI:https://doi.org/10.4314/jfas.v12i1S.6.