IDDA, A.; AYAT, L.; ZAOUI, O. EFFECT OF WIDE-BANDGAP OF N-TYPE AMORPHOUS SILICON OXIDE (a-SiOX:H) LAYER ON THE PERFORMANCE OF a-Si:H SOLAR CELL. Journal of Fundamental and Applied Sciences, [S. l.], v. 12, n. 1S, p. 66–77, 2019. DOI: 10.4314/jfas.v12i1S.6. Disponível em: https://jfas.info/index.php/JFAS/article/view/638. Acesso em: 14 mar. 2026.