A. Idda, L. Ayat, and O. Zaoui, “EFFECT OF WIDE-BANDGAP OF N-TYPE AMORPHOUS SILICON OXIDE (a-SiOX:H) LAYER ON THE PERFORMANCE OF a-Si:H SOLAR CELL”, J. Fundam. Appl. Sci., vol. 12, no. 1S, pp. 66–77, Nov. 2019.