DETERMINATION OF SPONTANEOUS EMISSION RATE AND CARRIER RECOMBINATION CHANNELS IN GaInAsSb/AlGaAsSb MULTIPLE QUANTUM WELL LASER DIODES EMITTING NEAR 2.3 µm
DOI:
https://doi.org/10.4314/jfas.v11i2.23Keywords:
Keywords: Amplified spontaneous emission; Spontaneous emission; Gain; Recombination.Abstract
In this paper, Amplified spontaneous emission spectra is used to extract the gain and internal loss of 2.3 µm narrow ridge-waveguide GaInAsSb-AlGaAsSb quantum well laser diodes by Cassidy’s method. The spontaneous emission intensity was extracted using the average value of the amplified spontaneous emission intensity. The dependence of the integrated spontaneous emission intensity on injection current has been studied. The results show that the current is dominated by radiative recombination at this emission wavelength.
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References
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[6] Shtengel G E, Belenky G L, Hyberstsen M S, Kazarinov R F, Ackerman D A. 9, 1998, 901-940, http://dx.doi.org/10.1142/S0129156498000385
[7] Kesler M P, Harder C. IEEE Photon. Technol. Lett. 2, 1990, 464-466, http://dx.doi.org/10.1109/68.56626
[8] Gordon E I. The Bell System Technical Journal. 43, 1964, 507-539, http://dx.doi.org/10.1002/j.1538-7305.1964.tb04076.x
[9] Tsvid G, Kirch J, Mawst L J, Kanskar M, Cai J, Arif R A, Tansu N, Smowton P M, Blood P. IEEE J. Quantum Electron. 44, 2008, 732-739, http://dx.doi.org/10.1109/JQE.2008.924242
[10] Oster A, Bugge F, Erbert G, Wenzel H. IEEE Journal of Selected Topics in Quantum Electronics. 5, 1999, 631-636, http://dx.10.1109/2944.788428
[11] Minch J, Park S H, Keating T, Chuang S L. IEEE J. Quantum Electron. 35, 1999, 771-782, http://dx.doi.org/ 10.1109/3.760325
[12] Hunziker G, Knop W, Unger P, Harder C. IEEE J. Quantum Electron. 31, 1995, 643-646, http://dx.doi.org/10.1109/3.371937
[13] Gupta J A, Barrios P J, Lapointe J, Aers G C, Storey C. Appl. Phys. Lett. 95, 2009, 1-3, http://dx.doi.org/10.1063/1.3189814
[14] Salhi A, Rouillard Y, Pérona A, Grech P, Garcia M, Sirtori C, Semicond. Sci. Technol. 19, 2004, 260-262, https://doi.org/10.1088/0268-1242/19/2/024
[15] Ramanujan S, Agrawal G P, Chwalek J M, Winful H. IEEE J. Quantum Electron. 32, 1996, 213-221, http://dx.doi.org/10.1109/3.481868
[16] Miller D.A.B. et al., Optical physics of quantum wells. In Quantum Dynamics of Simple Systems (Oppo, G.-L. et al.), Wilkinson, M., Eds., Institute of Physics: London, 1996, pp. 239–266
[17] Salhi A, Rouillard Y, Angellier J, Garcia M. IEEE Photonics Tech. Lett. 16, 2004, 2424-2426, http://dx.doi.org/10.1109/LPT.2004.835623
[18] Belenky G, Shterengas L, Kipshidze G, Hosoda T. IEEE Journal of Selected Topics in Quantum Electronics. 17, 2011, 1426-1434, http://dx.doi.org/10.1109/JSTQE.2011.2128300
[19] Pakulski G, Gupta J A, Barrios P J, Delage A, Poitras D, Wu X, E. E,Wasilewski Z R. SPIE Proceedings, 5577, 2004, 82-87, http://dx.doi.org/10.1117/12.567550
[20] Gadedjisso-Tossou K S, Belashene S, Mohou M A, E. Tournié, Rouillard Y. Semicond. Sci. Technol. 28, 2013, 1-6, http://dx.doi.org/10.1088/0268-1242/28/1/015015
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Published
2019-04-20
How to Cite
GADEDJISSO-TOSSOU, K. S.; DZAGLI, M. M.; MOHOU, M. A.; ROUILLARD, Y. DETERMINATION OF SPONTANEOUS EMISSION RATE AND CARRIER RECOMBINATION CHANNELS IN GaInAsSb/AlGaAsSb MULTIPLE QUANTUM WELL LASER DIODES EMITTING NEAR 2.3 µm. Journal of Fundamental and Applied Sciences, [S. l.], v. 11, n. 2, p. 901–913, 2019. DOI: 10.4314/jfas.v11i2.23. Disponível em: https://jfas.info/index.php/JFAS/article/view/379. Acesso em: 30 jan. 2025.
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